型號 MJ802G 製造商 onsemi 分類 Bipolar Transistors - BJT RoHS 數據表 MJ802G 描述 Bipolar Transistors - BJT 30A 90V 200W NPN
製造商 onsemi 分類 Bipolar Transistors - BJT Collector- Base Voltage VCBO 100 V Collector- Emitter Voltage VCEO Max 90 V Collector-Emitter Saturation Voltage 0.8 V Configuration Single Emitter- Base Voltage VEBO 4 V Gain Bandwidth Product fT 2 MHz Maximum DC Collector Current 30 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 65 C Mounting Style Through Hole Package / Case TO-204-2 Packaging Tray Pd - Power Dissipation 200 W Series MJ802 Transistor Polarity NPN