型號 HN1A01FE-Y,LF 製造商 Toshiba 分類 Bipolar Transistors - BJT RoHS 數據表 HN1A01FE-Y,LF 描述 Bipolar Transistors - BJT ES6 PLN
製造商 Toshiba 分類 Bipolar Transistors - BJT Collector- Base Voltage VCBO - 50 V Collector- Emitter Voltage VCEO Max - 50 V Collector-Emitter Saturation Voltage - 0.1 V Emitter- Base Voltage VEBO - 5 V Gain Bandwidth Product fT 80 MHz Maximum DC Collector Current - 150 mA Mounting Style SMD/SMT Package / Case ES6-6 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 100 mW Qualification AEC-Q101 Series HN1A01 Transistor Polarity PNP