型號 2N1131 TIN/LEAD 製造商 Central Semiconductor 分類 Bipolar Transistors - BJT RoHS 數據表 2N1131 TIN/LEAD 描述 Bipolar Transistors - BJT 50Vcbo 50Vcer 35Vceo 0.6A Ic 2.0W PNP
製造商 Central Semiconductor 分類 Bipolar Transistors - BJT Collector- Base Voltage VCBO 50 V Collector- Emitter Voltage VCEO Max 35 V Collector-Emitter Saturation Voltage 1.5 V Configuration Single Emitter- Base Voltage VEBO 5 V Gain Bandwidth Product fT 50 MHz Maximum DC Collector Current - Maximum Operating Temperature + 200 C Minimum Operating Temperature - 65 C Mounting Style Through Hole Package / Case TO-39-3 Packaging Bulk Pd - Power Dissipation 0.6 W Series 2N1131 Transistor Polarity PNP