型號 IKB40N65ES5ATMA1 製造商 Infineon Technologies 分類 IGBT Transistors RoHS 數據表 IKB40N65ES5ATMA1 描述 IGBT Transistors INDUSTRY 14
製造商 Infineon Technologies 分類 IGBT Transistors Collector- Emitter Voltage VCEO Max 650 V Collector-Emitter Saturation Voltage 1.35 V Configuration Single Continuous Collector Current at 25 C 79 A Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 175 C Minimum Operating Temperature - 40 C Mounting Style SMD/SMT Package / Case TO-263-3 Packaging Cut Tape, Reel Pd - Power Dissipation 230 W Series Trenchstop IGBT5 Technology SI