型號 IKD10N60RATMA1 製造商 Infineon Technologies 分類 IGBT Transistors RoHS 數據表 IKD10N60RATMA1 描述 IGBT Transistors IGBT w/ INTG DIODE 600V 20A
製造商 Infineon Technologies 分類 IGBT Transistors Collector- Emitter Voltage VCEO Max 600 V Collector-Emitter Saturation Voltage 1.65 V Configuration Single Continuous Collector Current at 25 C 20 A Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 175 C Minimum Operating Temperature - 40 C Mounting Style SMD/SMT Package / Case TO-252-3 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 150 W Series Trenchstop RC Technology SI