SI1013R-T1-GE3

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型號: SI1013R-T1-GE3

製造商: Vishay Semiconductors

分類: MOSFET

RoHS

數據表: SI1013R-T1-GE3

描述: MOSFET 20V 350mA 175mW 1.2 ohms @ 4.5V

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產品規格

製造商: Vishay Semiconductors

分類: MOSFET

Channel Mode: Enhancement

Id - Continuous Drain Current: 350 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Mounting Style: SMD/SMT

Number of Channels: 1 Channel

Package / Case: SC-75A-3

Packaging: Cut Tape, MouseReel, Reel

Pd - Power Dissipation: 175 mW

Qg - Gate Charge: 1.65 nC

Rds On - Drain-Source Resistance: 1.2 Ohms

Technology: SI

Tradename: TrenchFET

Transistor Polarity: P-Channel

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs - Gate-Source Voltage: - 6 V, + 6 V

Vgs th - Gate-Source Threshold Voltage: 450 mV

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最新評價

發表評價

Empresa muy seria , el envió llego como veis en las fotos de manera muy segura , todos los componentes son de gran calidad , aconsejo TNT frente a DHL como compa?ía para el envió .

Francisco Marin

Quickly came to CET, all in one package. Look at the rules

Earl Sault

Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.

Kai Hallaren

Hello! Order received, very happy. Thank you very much!

Flavia

Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow

Brenda Gfeller

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