型號 SI1022R-T1-GE3 製造商 Vishay Semiconductors 分類 MOSFET RoHS 數據表 SI1022R-T1-GE3 描述 MOSFET 60V Vds 20V Vgs SC75A
製造商 Vishay Semiconductors 分類 MOSFET Channel Mode Enhancement Id - Continuous Drain Current 330 mA Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case SOT-416-3 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 250 mW Qg - Gate Charge 600 pC Rds On - Drain-Source Resistance 2.25 Ohms Technology SI Tradename TrenchFET Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 60 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1 V