型號 HUF75329D3ST 製造商 onsemi / Fairchild 分類 MOSFET RoHS 數據表 HUF75329D3ST 描述 MOSFET 20a 55V N-Channel UltraFET
製造商 onsemi / Fairchild 分類 MOSFET Channel Mode Enhancement Id - Continuous Drain Current 20 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TO-252-3 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 128 W Qg - Gate Charge 65 nC Rds On - Drain-Source Resistance 26 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 55 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2 V