SI1012X-T1-GE3

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型號: SI1012X-T1-GE3

製造商: Vishay / Siliconix

分類: MOSFET

RoHS

數據表: SI1012X-T1-GE3

描述: MOSFET 20V 0.6A 175mW 700mohm @ 4.5V

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產品規格

製造商: Vishay / Siliconix

分類: MOSFET

Channel Mode: Enhancement

Id - Continuous Drain Current: 600 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Mounting Style: SMD/SMT

Number of Channels: 1 Channel

Package / Case: SC-89-3

Packaging: Cut Tape, MouseReel, Reel

Pd - Power Dissipation: 275 mW

Qg - Gate Charge: 750 pC

Rds On - Drain-Source Resistance: 700 mOhms

Technology: SI

Tradename: TrenchFET

Transistor Polarity: N-Channel

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Vgs th - Gate-Source Threshold Voltage: 450 mV

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最新評價

發表評價

Thank you very much! Very fast shipping. High quality. Very good seller.

Klimenko Yuriy Mihaylovich

Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.

Kai Hallaren

Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow

Brenda Gfeller