型號 SI1032R-T1-GE3 製造商 Vishay Semiconductors 分類 MOSFET RoHS 數據表 SI1032R-T1-GE3 描述 MOSFET 20V 200mA 280mW 5.0ohm @ 4.5V
製造商 Vishay Semiconductors 分類 MOSFET Channel Mode Enhancement Id - Continuous Drain Current 200 mA Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case SC-75-3 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 280 mW Qg - Gate Charge 750 pC Rds On - Drain-Source Resistance 5 Ohms Technology SI Tradename TrenchFET Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 20 V Vgs - Gate-Source Voltage - 6 V, + 6 V Vgs th - Gate-Source Threshold Voltage 400 mV