SI1062X-T1-GE3

圖片僅供參考

型號: SI1062X-T1-GE3

製造商: Vishay Semiconductors

分類: MOSFET

RoHS

數據表: SI1062X-T1-GE3

描述: MOSFET 20V Vds 8V Vgs SC89-3

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產品規格

製造商: Vishay Semiconductors

分類: MOSFET

Channel Mode: Enhancement

Id - Continuous Drain Current: 530 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Mounting Style: SMD/SMT

Number of Channels: 1 Channel

Package / Case: SC-89-3

Packaging: Cut Tape, MouseReel, Reel

Pd - Power Dissipation: 220 mW

Qg - Gate Charge: 2.7 nC

Rds On - Drain-Source Resistance: 420 mOhms

Technology: SI

Tradename: TrenchFET

Transistor Polarity: N-Channel

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Vgs th - Gate-Source Threshold Voltage: 400 mV

產品類別

Circuit Protection 162,445 產品 Connectors 2,428,639 產品 Electromechanical 556,105 產品 Embedded Solutions 41,129 產品 Enclosures 20,894 產品 Engineering Development Tools 42,996 產品 Industrial Automation 558,346 產品 LED Lighting 77,795 產品 Optoelectronics 109,177 產品 Passive Components 2,996,719 產品 Power 323,117 產品 Semiconductors 567,247 產品 Sensors 70,154 產品 Test & Measurement 23,394 產品

最新評價

Empresa muy seria , el envió llego como veis en las fotos de manera muy segura , todos los componentes son de gran calidad , aconsejo TNT frente a DHL como compa?ía para el envió .

Francisco Marin

Perfectly.

Sensofar Tech, SL

Decent quality, not минвелл certainly, but enough decent

TEIXEIRA

Seems well have not tested

Hazel Gooby

Looks good

Michael Beck

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