型號 IPD80R450P7ATMA1 製造商 Infineon Technologies 分類 MOSFET RoHS 數據表 IPD80R450P7ATMA1 描述 MOSFET LOW POWER_NEW
製造商 Infineon Technologies 分類 MOSFET Channel Mode Enhancement Id - Continuous Drain Current 11 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 50 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TO-252-3 Packaging Cut Tape, Reel Pd - Power Dissipation 73 W Qg - Gate Charge 24 nC Rds On - Drain-Source Resistance 450 mOhms Technology SI Tradename CoolMOS Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 800 V Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 3 V