IMW120R220M1HXKSA1

圖片僅供參考

型號: IMW120R220M1HXKSA1

製造商: Infineon Technologies

分類: MOSFET

RoHS

數據表: IMW120R220M1HXKSA1

描述: MOSFET SIC DISCRETE

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產品規格

製造商: Infineon Technologies

分類: MOSFET

Channel Mode: Enhancement

Id - Continuous Drain Current: 13 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Mounting Style: Through Hole

Number of Channels: 1 Channel

Package / Case: TO-247-3

Packaging: Tube

Pd - Power Dissipation: 75 W

Qg - Gate Charge: 8.5 nC

Rds On - Drain-Source Resistance: 289 mOhms

Technology: SiC

Tradename: CoolSiC

Transistor Polarity: N-Channel

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs - Gate-Source Voltage: - 7 V, + 23 V

Vgs th - Gate-Source Threshold Voltage: 5.7 V

產品類別

Circuit Protection 162,445 產品 Connectors 2,428,639 產品 Electromechanical 556,105 產品 Embedded Solutions 41,129 產品 Enclosures 20,894 產品 Engineering Development Tools 42,996 產品 Industrial Automation 558,346 產品 LED Lighting 77,795 產品 Optoelectronics 109,177 產品 Passive Components 2,996,719 產品 Power 323,117 產品 Semiconductors 567,247 產品 Sensors 70,154 產品 Test & Measurement 23,394 產品

最新評價

everything as it is written in the description of the same deductible prodovtsu deserved

Aleksov

all exactly and work. радиолюбителя useful set to, thank you)

Mahmoud Shendy

Takes 8 days to Japan. Good!

Alex Fragkos

Yes, they are all here. :)

sudheer kumar sirra

Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery

Andrzej Piwowarczyk

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