型號 SI1035X-T1-GE3 製造商 Vishay Semiconductors 分類 MOSFET RoHS 數據表 SI1035X-T1-GE3 描述 MOSFET 20V 200/150mA 5.0/8.0ohm @ 4.5V
製造商 Vishay Semiconductors 分類 MOSFET Channel Mode Enhancement Id - Continuous Drain Current 190 mA, 155 mA Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 2 Channel Package / Case SC-89-6 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 280 mW Qg - Gate Charge 750 pC, 1.5 nC Rds On - Drain-Source Resistance 5 Ohms, 8 Ohms Technology SI Tradename TrenchFET Transistor Polarity N-Channel, P-Channel Vds - Drain-Source Breakdown Voltage 20 V Vgs - Gate-Source Voltage - 5 V, + 5 V Vgs th - Gate-Source Threshold Voltage 400 mV