R8002KND3TL1

圖片僅供參考
型號
R8002KND3TL1
製造商
ROHM Semiconductor
分類
MOSFET
RoHS
數據表
描述
MOSFET

產品規格

製造商
ROHM Semiconductor
分類
MOSFET
Channel Mode
Enhancement
Id - Continuous Drain Current
1.6 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TO-252-3
Packaging
Reel
Pd - Power Dissipation
30 W
Qg - Gate Charge
7.5 nC
Rds On - Drain-Source Resistance
4.2 Ohms
Technology
SI
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
800 V
Vgs - Gate-Source Voltage
20 V, 30 V
Vgs th - Gate-Source Threshold Voltage
4.5 V

最新評價

Decent quality, not минвелл certainly, but enough decent

Shipping a little 1 weeks, normal packing, the procedure is complete.

Everything is fine!

Great product. Arrived ahead of time. Thank you

Good material. Great seller, efficient and insurance. Ok

您可能還喜歡

R8002KND3TL1 相關的型號

R800 相關的關鍵詞

  • R8002KND3TL1 集成
  • R8002KND3TL1 RoHS
  • R8002KND3TL1 PDF
  • R8002KND3TL1 数据表
  • R8002KND3TL1 型号
  • R8002KND3TL1 购买
  • R8002KND3TL1 分销商
  • R8002KND3TL1 PDF
  • R8002KND3TL1 零件
  • R8002KND3TL1 集成电路
  • R8002KND3TL1 下载PDF
  • R8002KND3TL1 下载数据表
  • R8002KND3TL1 供应
  • R8002KND3TL1 供应商
  • R8002KND3TL1 价钱
  • R8002KND3TL1 数据表
  • R8002KND3TL1 图片
  • R8002KND3TL1 图片
  • R8002KND3TL1 库存
  • R8002KND3TL1 现货
  • R8002KND3TL1 原厂
  • R8002KND3TL1 最便宜
  • R8002KND3TL1 优秀
  • R8002KND3TL1 无铅
  • R8002KND3TL1 规格
  • R8002KND3TL1 热门优惠
  • R8002KND3TL1 阶梯价格
  • R8002KND3TL1 技术资料